![]() The dash-dot vertical line marks the position of the ICT at zero magnetic field, corresponding to ε = 0. The dashed horizontal lines delimit regions in which the spectroscopy tone power is held constant at room temperature. (a) Phase response of the L C resonator around the spin-orbit anticrossing of | ⇓⇓ ⟩ with S(2,0) as a function of V G 2 and f exc at B z = 600 mT. Photon-assisted spectroscopy at finite magnetic field for an even-parity interdot charge transition. The double arrows mark the processes giving rise to the branches observed in (a). (d) Energy diagram of a DQD near the “(1,1)” ↔ “(2,0)” transition at zero magnetic field. Additional side branches appear at one-half and one-third of the side-branch frequency in (a), indicating two-photon and three-photon processes, respectively. The delivered microwave power is increased by 10 dBm compared to (a). (c) Multiphoton processes arising at higher driving power. The central dip at ε = 0 vanishes when the excitation energy matches Δ. (b) Theoretical simulation of the driven DQD phase response. In addition to the central interdot transition signal vanishing at 5.72 ± 0.04 GHz, two side branches mark photon-assisted charge transitions between the quantum dots. We estimate the power at the device level to be around − 70 dBm. #Option alpha signals pdf download generator#The output power of the microwave generator is adjusted for each f exc in order to deliver a constant power at the device. (a) Phase response of the resonator as a function of gate voltage, V G 2, and microwave frequency, f exc, at zero magnetic field. ![]() ![]() ![]() Photon-assisted spectroscopy at zero magnetic field. (c),(e) Phase response as a function of V G 2 and B z at fixed V G 1, revealing the ground-state evolution in the magnetic field. The first (second) number represents the equivalent hole occupation in the dot under gate 1 (gate 2). The insets show the equivalent one- and two-electron charge configurations just above and below ICT 3 and ICT 2, respectively. (b),(d) Phase response of the L C resonator as a function of V G 1 and V G 2 showing interdot charge transitions ICT 2 and ICT 3 for even and odd parities, respectively. The inset shows a false color scanning electron micrograph of the device (scale bar is 100 nm). Using bias tees, they are combined with about a 500 MHz reflectometry tone ( f r ) and a 1–20 GHz microwave spectroscopy tone ( f exc ), respectively. Static voltages V G 1 and V G 2 are applied to gates 1 and 2. An L C resonator wired to gate 1 is used for reflectometry readout. (a) Simplified 3D schematic of a split-gate, silicon-on-insulator field-effect transistor. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g factors and tunnel and spin-orbit couplings for both even and odd occupation.ĭouble quantum dot device and working points. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. A first gigahertz-frequency tone drives electric dipole spin resonance enabled by the valence-band spin-orbit coupling. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. In view of this, spectroscopic tools compatible with a scalable device layout are of primary importance. ![]() In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. ![]()
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